Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1561BE Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1561BE Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1561BE P-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description The ACE1561BE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V,ID = -3A RDS(ON)=90mΩ @ VGS= -4.5V RDS(ON)=110mΩ @ VGS= -2.5V SOT23-3 Package Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (Continuous) TA=25℃ ID -3 A TA=70℃ -2 Drain Current (Pulsed) IDM -12 A Power Dissipation TA=25℃ PD 1.3 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3 Ordering information ACE1561BE XX+H BM: SOT-23-3 Pb - free Halogen - free |
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