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ACE1561BEBM+H Datenblatt(PDF) 2 Page - ACE Technology Co., LTD.

Teilenummer ACE1561BEBM+H
Bauteilbeschribung  P-Channel Enhancement Mode Field Effect Transistor
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

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ACE1561BE
P-Channel Enhancement Mode Field Effect Transistor
VER 1.1
2
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min Typ
Max Unit
Static
Drain-source breakdown
voltage
V(BR)DSS
VGS=0V, ID=-250µA
-20
V
Zero gate voltage drain
current
IDSS
VDS=-20V, VGS=0V
-1
µA
Gate threshold voltage
VGS(th)
VGS=VDS, IDS=-250µA
-0.4
-1
V
Gate leakage current
IGSS
VGS=±8V, VDS=0V
±10
nA
Drain-source on-state
resistance
RDS(ON)
VGS=-4.5V, ID=-2.8A
90
110
VGS=-2.5V, ID=-2A
110
150
Forward trans conductance
gFS
VDS=-5V, ID=-2A
6.5
S
Diode forward voltage
VSD
ISD=1A, VGS=0V
-0.7
-1.3
V
Switching
Total gate charge
Qg
VGS=4.5V, VDS=10V, ID=6A
5.5
nC
Gate-source charge
Qgs
1.5
Gate-drain charge
Qgd
1.3
Turn-on delay time
td(on)
VDD=-6V, RL=6Ω
ID=-1A, VGEN=-4.5V
RG=6Ω
8
ns
Turn-on rise time
Tr
11
Turn-off delay time
td(off)
33
Turn-off fall time
tf
15
Dynamic
Input capacitance
Ciss
VGS=0V, VDS=-10V,
f=1.0MHz
150
pF
Output capacitance
Coss
53
Reverse transfer capacitance
Crss
17
Note :
A: The value of RθJAis measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA
=25°C. The value in any given application de
pends on the user's specific board design. The current rating is based on the t≤ 10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C: The RθJAis the sum of the thermal impedance from junction to lead RθJL and lead to ambient.


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