Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2422ABM+H Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2422ABM+H Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 8 page ACE2422A N-Channel Enhancement Mode MOSFET VER 1.2 3 Electrical Characteristics (TA=25℃, unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.5 1.5 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0.0V 1 uA VDS=48V,VGS=0.0V TJ=55℃ 10 On-State Drain Current ID(on) VDS≧4.5V,VGS=4.5V 10 A Drain-Source On-Resistance RDS(on) VGS = 10V,ID=3.0A 0.106 0.125 Ω VGS =4.5V,ID=2.5A 0.118 0.145 Forward Transconductance gfs VDS=15V,ID=4.0A 12 S Diode Forward Voltage VSD IS=2.5A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg VDS=30V, VGS=4.5V ID ≡4.0A 4.0 6 nC Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 1.0 Input Capacitance Ciss VDS=30V, VGS=0V f=1MHz 320 pF Output Capacitance Coss 42 Reverse Transfer Capacitance Crss 20 Turn-On Time td(on) VDD=30V ,RL =12Ω ID ≡2.5A,V GEN=10V RG =6Ω 6 10 nS tr 12 20 Turn-Off Time td(off) 18 30 tf 10 15 |
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