Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE14409T Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE14409T Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE14409T P-Channel Enhancement Mode Field Effect Transistor VER 1.2 2 Ordering information ACE14409T XX + H Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250µA -1 -1.5 -3 V Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-10A 12 15 m Ω VGS=-4.5V, ID=-7A 18 25 Forward Transconductance gFS VGS=-10V, ID=-10A 20 S Diode Forward Voltage VSD ISD=-2A, VGS=0V -1.2 V Switching Total Gate Charge Qg VGS=-10V,VDS=-15V, ID=-10A, 24 nC Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd 6 Turn-On Delay Time Td(on) VGS=-10V,VDS=-15V, ID=-10A ,RGEN=1Ω 9 ns Turn-On Rise Time tf 8 Turn-Off Delay Time td(off) 28 Turn-Off Fall Time tf 10 Dynamic Input Capacitance Ciss VGS=0V,VDS=-15V, f=1MHz 1750 pF Output Capacitance Coss 215 Reverse Transfer Capacitance Crss 180 FM: SOP-8 Pb - free Halogen - free |
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