Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE17440M Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE17440M Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE17440M N-Channel 40-V (D-S) MOSFET VER 1.1 2 Electrical Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 V Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=32V, VGS=0V 1 uA VDS=32V, VGS=0V, TJ=55℃ 25 On-State Drain-Current a ID(on) VDS=5V, VGS=10V 25 A Static Drain-Source On-Resistance a rDS(ON) VGS=10V,ID=12A 15 m Ω VGS=4.5V,ID=9.6A 18 Forward Transconductance a gfS VDS=15V,ID=12A 22 S Diode Forward Voltage a VSD IS=3.2A ,VGS=0V 0.75 V Dynamic b Total Gate Charge Qg VDS=20V, VGS=4.5V, ID=12A 19 nC Gate-Source Charge Qgs 5.0 Gate-Drain Charge Qgd 9.1 Turn-On Delay Time td(on) VDS=20V, ,RL=1.7 Ω ID=12A ,VGEN=10V RGEN=6 Ω, 7 ns Rise Time tf 38 Turn-Off Delay Time td(off) 62 Fall Time tf 24 Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz 1826 pF Output Capacitance Coss 253 Reverse Transfer Capacitance Crss 208 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing . |
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