Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE17430B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE17430B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE17430B N-Channel Enhancement Mode Power MOSFET VER 1.1 2 Ordering information ACE17430B XX + H Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA 30 V Zero gate voltage drain current IDSS VDS=30V, VGS=0V 1 µA Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA 1 1.5 2.2 V Gate leakage current IGSS VGS=±20V, VDS=0V ±100 µA Drain-source on-state resistance RDS(ON) VGS=10V, ID=20A 10 14 mΩ VGS=4.5V, ID=15A 13 25 Forward Trans conductance gFS VDS =5V, ID= 20A 26 S Diode forward voltage VSD ISD=20A, VGS=0V 1.2 V Maximum body-diode continuous current IS 45 A Switching Total Gate Charge Qg VGS=10V, VDS=15V, ID=20A 17 nC Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 4 Turn-on Delay Time td (on ) VDD=15V, ID=2A, VGS=10V,RG=3 Ω 5 ns Turn-on Rise Time tr 12 Turn-off Delay Time td(off) 19 Turn-off Fall Time tf 6 Dynamic Input Capacitance Ciss VGS=0V, VDS=15V, f=1.0MHz 920 pF Output Capacitance Coss 132 Reverse Transfer Capacitance Crss 103 YM: TO-252 Pb - free Halogen - free |
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