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ACE16904B Datenblatt(PDF) 3 Page - ACE Technology Co., LTD.

Teilenummer ACE16904B
Bauteilbeschribung  N-Channel Enhancement Mode Power MOSFET
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE16904B Datenblatt(HTML) 3 Page - ACE Technology Co., LTD.

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ACE16904B
N-Channel Enhancement Mode Power MOSFET
VER 1.1
3
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID= 250
μA
60
V
BVDSS Temperature Coefficient
△BV
DSS/
△T
J
Reference to 25°C ,
ID=1mA
0.03
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0V,
TJ=25°C
1
uA
VDS = 48 V, VGS =
0V , TJ=125°C
10
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1.2
1.6
2.5
V
VGS(th) Temperature Coefficient
△V
GS(th)
4
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=10A
9.8
12
m
Ω
VGS=4.5V, ID=8A
12
15
Forward Transconductance
gFS
VDS=10V, ID=6A
11.7
S
Diode Forward Voltage
VSD
ISD=1A, VGS=0V
1
V
Diode Forward Current
IS
55
A
Switching
Total Gate Charge
Qg
VDS=30V, ID=10A
VGS=10V
39
59
nC
Gate-Source Charge
Qgs
5.9
9
Gate-Drain Charge
Qgd
8.9
14
Turn-On Delay Time
Td(on)
VDD=15V,ID=1A
VGS=10V, RGEN=6
Ω
9.6
18
ns
Turn-On Rise Time
tf
28.2
54
Turn-Off Delay Time
td(off)
45.3
86
Turn-Off Fall Time
tf
10.9
21
Dynamic
Input Capacitance
Ciss
VDS=25V, VGS=0V
f=1MHz
2100
pF
Output Capacitance
Coss
165
Reverse Transfer Capacitance
Crss
80
Gate resistance
Rg
VGS=0V, VDS=0V,
F=1MHz
1.6
Ω
Note:
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG
=25Ω,Starting T
J=25°C.
3.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
4.
Essentially independent of operating temperature.


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