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ACE16428B Datenblatt(PDF) 3 Page - ACE Technology Co., LTD.

Teilenummer ACE16428B
Bauteilbeschribung  N-Channel Enhancement Mode Field Effect Transistor
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
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ACE16428B Datenblatt(HTML) 3 Page - ACE Technology Co., LTD.

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ACE16428B
N-Channel Enhancement Mode Field Effect Transistor
VER 1.1
3
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
uA
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1
1.6
3
V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=12A
4.5
7
m
Ω
VGS=4.5V, ID=10A
6.5
10.5
Forward Transconductance
gFS
VDS=10V, ID=12A
30
S
Diode Forward Voltage
VSD
ISD=2A, VGS=0V
0.71
1.0
V
Maximum Body-Diode Continuous
Current
IS
2
A
Switching
Total Gate Charge
Qg
VDS=15V, ID=12A
VGS=5V
19
nC
Gate-Source Charge
Qgs
2.7
Gate-Drain Charge
Qgd
2.5
Turn-On Delay Time
Td(on)
VDS=15V, VGS=10V
RGEN=6
Ω, R
L=15
Ω
10
ns
Turn-On Rise Time
tf
8
Turn-Off Delay Time
td(off)
30
Turn-Off Fall Time
tf
5
Dynamic
Input Capacitance
Ciss
VDS=15V, VGS=0V
f=1MHz
1625
pF
Output Capacitance
Coss
190
Reverse Transfer Capacitance
Crss
132
Note:
A.
The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The
value in any given application depends on the user's specific board design.
B.
The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C.
Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty
cycles to keep initial TJ =25°C.
D.
The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E.
The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
F.
These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large
heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G.
The maximum current rating is package limited.
H.
These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C


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