Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE16904BPN+H Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE16904BPN+H Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 7 page ACE16904B N-Channel Enhancement Mode Power MOSFET VER 1.1 3 Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID= 250 μA 60 V BVDSS Temperature Coefficient △BV DSS/ △T J Reference to 25°C , ID=1mA 0.03 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0V, TJ=25°C 1 uA VDS = 48 V, VGS = 0V , TJ=125°C 10 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1.2 1.6 2.5 V VGS(th) Temperature Coefficient △V GS(th) 4 Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=10A 9.8 12 m Ω VGS=4.5V, ID=8A 12 15 Forward Transconductance gFS VDS=10V, ID=6A 11.7 S Diode Forward Voltage VSD ISD=1A, VGS=0V 1 V Diode Forward Current IS 55 A Switching Total Gate Charge Qg VDS=30V, ID=10A VGS=10V 39 59 nC Gate-Source Charge Qgs 5.9 9 Gate-Drain Charge Qgd 8.9 14 Turn-On Delay Time Td(on) VDD=15V,ID=1A VGS=10V, RGEN=6 Ω 9.6 18 ns Turn-On Rise Time tf 28.2 54 Turn-Off Delay Time td(off) 45.3 86 Turn-Off Fall Time tf 10.9 21 Dynamic Input Capacitance Ciss VDS=25V, VGS=0V f=1MHz 2100 pF Output Capacitance Coss 165 Reverse Transfer Capacitance Crss 80 Gate resistance Rg VGS=0V, VDS=0V, F=1MHz 1.6 Ω Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG =25Ω,Starting T J=25°C. 3. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%. 4. Essentially independent of operating temperature. |
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