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ACE16428BPN+H Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE16428BPN+H Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 8 page ACE16428B N-Channel Enhancement Mode Field Effect Transistor VER 1.1 3 Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1 1.6 3 V Gate Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=12A 4.5 7 m Ω VGS=4.5V, ID=10A 6.5 10.5 Forward Transconductance gFS VDS=10V, ID=12A 30 S Diode Forward Voltage VSD ISD=2A, VGS=0V 0.71 1.0 V Maximum Body-Diode Continuous Current IS 2 A Switching Total Gate Charge Qg VDS=15V, ID=12A VGS=5V 19 nC Gate-Source Charge Qgs 2.7 Gate-Drain Charge Qgd 2.5 Turn-On Delay Time Td(on) VDS=15V, VGS=10V RGEN=6 Ω, R L=15 Ω 10 ns Turn-On Rise Time tf 8 Turn-Off Delay Time td(off) 30 Turn-Off Fall Time tf 5 Dynamic Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz 1625 pF Output Capacitance Coss 190 Reverse Transfer Capacitance Crss 132 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C |
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