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ACE16428BPN+H Datenblatt(PDF) 1 Page - ACE Technology Co., LTD.

Teilenummer ACE16428BPN+H
Bauteilbeschribung  N-Channel Enhancement Mode Field Effect Transistor
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

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ACE16428B
N-Channel Enhancement Mode Field Effect Transistor
VER 1.1
1
Description
The ACE16428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
VDS (V) = 30V
ID = 40A (VGS = 10V)
RDS(ON) < 7m
Ω (V
GS = 10V)
RDS(ON)
< 10.5mΩ (V
GS = 4.5V)
100% Delta Vsd Tested
100% Rg Tested
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)
TA=25
OC
ID
40
A
TA=100
OC
17
Drain Current (Pulse)
C
IDM
50
Drain Current (Continuous)
TA=25
OC
IDSM
11
A
TA=70
OC
8
Power Dissipation
B
TA=25
OC
PD
30
W
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
OC
Maximum Junction-to-Ambient
A
t≦10s
RθJA
21
℃/W
Maximum Junction-to-Ambient
A D
Steady-State
50
℃/W
Maximum Junction-to-Case
Steady-State
RθJC
3.5
℃/W
A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed
junction temperature of 150°C. The value in any given application depends on the user's specific board
design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is
more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.


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