Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE16428BPN+H Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE16428BPN+H Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 8 page ACE16428B N-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description The ACE16428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 40A (VGS = 10V) RDS(ON) < 7m Ω (V GS = 10V) RDS(ON) < 10.5mΩ (V GS = 4.5V) 100% Delta Vsd Tested 100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC ID 40 A TA=100 OC 17 Drain Current (Pulse) C IDM 50 Drain Current (Continuous) TA=25 OC IDSM 11 A TA=70 OC 8 Power Dissipation B TA=25 OC PD 30 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Maximum Junction-to-Ambient A t≦10s RθJA 21 ℃/W Maximum Junction-to-Ambient A D Steady-State 50 ℃/W Maximum Junction-to-Case Steady-State RθJC 3.5 ℃/W A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. |
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