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TS5MP646

SCDS371 – JANUARY 2018

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Pin Functions (continued)

PIN

I/O

DESCRIPTION

NAME

NO.

DA2P

D4

I/O

Differential I/O

D2N

D5

I/O

Differential I/O

D2P

D6

I/O

Differential I/O

DB1N

E1

I/O

Differential I/O

DB1P

E2

I/O

Differential I/O

DA1N

E3

I/O

Differential I/O

DA1P

E4

I/O

Differential I/O

D1N

E5

I/O

Differential I/O

D1P

E6

I/O

Differential I/O

CLKBN

F1

I/O

Differential I/O

CLKBP

F2

I/O

Differential I/O

CLKAN

F3

I/O

Differential I/O

CLKAP

F4

I/O

Differential I/O

CLKN

F5

I/O

Differential I/O

CLKP

F6

I/O

Differential I/O

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage are with respect to ground, unless otherwise specified

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Supply Voltage

-0.5

6

V

Analog voltage range (DxN, CLKN, DxP, CLKP, DAxN, CLKAN, DAxP, CLKAP, DBxN,

CLKBN, DBxP, CLKBP)

-0.5

4

V

Digital Input Voltage (SEL, OE)

-0.5

6

V

Junction temperature

-65

150

°C

Storage temperature

-65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per

±2000

V

Charged device model (CDM), per JEDEC

±250