2SD1005-V datasheet(1/2 Pages) MCC

Teilenummer	2SD1005-V

Bauteilbeschribung	NPN Silicon Power Transistors

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Hersteller	MCC [Micro Commercial Components]

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2SD1005

-W

NPN Silicon

Power Transistors

Features

•

Excellent DC Current Gain Linearity

•

High Breakdown Voltage

Maximum Ratings

Symbol

Rating

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current,

1.0

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

-55 to +150

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25

°C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

VCEO

Collector-Emitter Breakdown Voltage

(IC=1.0mAdc,IB=0)

80

---

Vdc

VCBO

Collector-Base Breakdow n Voltage

(IC=0.1mAdc,IE=0)

100

---

Vdc

VEBO

Emitter-Base Breakdown Voltage

(IE=0.1mAdc,IC=0,)

5.0

---

Vdc

ICBO

Collector Cutoff Current

(VCB=100Vdc,IE=0)

---

0.1

µAdc

IEBO

Emitter Cutoff Current

(VEB=5.0Vdc, IC=0)

---

0.1

µAdc

hFE

DC Current Transfer Ratio

(VCE=2.0Vdc, IC=0.1Adc)

90

---

400

VCE(sat)

Collector-Emitter Saturation Voltage

(IC/IB=500mA/50mA)

---

0.5

Vdc

fT

Transition Frequency

(VCE=5Vdc, IC=10mAdc)

---

160

---

MHz

Cob

Output Capacitance

(VCB=10Vdc, IE=0, f=1.0MHz)

---

12

---

pF

SOT-89

1. OUT

2. GND

3. IN

Revision:

A

20

13/07/05

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

TM

Micro Commercial Components

www.mccsemi.com

1 of 2

25

B

A

E

D

G

H

F

K

J

C

1.55

.061

REF.

123

2SD1005

-V

2SD1005

-U

CLASSIFICATION OF hFE

Rank

W

V

U

Range

90-180

135-270

200-400

Marking

BW

BV

BU

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

•

RthJA

ThermalResistanceFromJunctionToAmbient

250

oC/W

(VCE=2.0Vdc, IC=0.5Adc)

25

---

VBE(sat)

Base-Emitter Saturation Voltage

(IC/IB=500mA/50mA)

---

1.5

Vdc

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