2N3700S datasheet(2/2 Pages) MICROSEMI

Teilenummer	2N3700S

Bauteilbeschribung	LOW POWER NPN SILICON TRANSISTOR

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Hersteller	MICROSEMI [Microsemi Corporation]

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2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS (con’t)

Collector-Emitter Cutoff Current

VCE = 90 Vdc

ICES

10

ηAdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

IEBO

10

ηAdc

ON CHARACTERISTICS (1)

Forward-Current Transfer Ratio

IC = 150 mAdc, VCE = 10 Vdc

IC = 0.1 mAdc, VCE = 10 Vdc

IC = 10 mAdc, VCE = 10 Vdc

IC = 500 mAdc, VCE = 10 Vdc

IC = 1.0 Adc, VCE = 10 Vdc

hFE

100

50

90

50

15

300

200

Collector-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

IC = 500 mAdc, IB = 50 mAdc

VCE(sat)

0.2

0.5

Vdc

Base-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

VBE(sat)

1.1

Vdc

DYNAMIC CHARACTERISTICS

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz

hfe

80

400

Magnitude of Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz

h

fe



5.0

20

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cobo

12

p

ƒ

Input Capacitance

VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cibo

60

pF

SAFE OPERATING AREA

DC Tests

TC = 25

0C, 1 Cycle, t = 10 ms

Test 1

VCE = 10 Vdc

2N3019, 2N3019S

IC = 500 mAdc

2N3057A, 2N3700, 2N3700UB

IC = 180 mAdc

Test 2

VCE = 40 Vdc

2N3019, 2N3019S

IC = 125 mAdc

2N3057A, 2N3700, 2N3700UB

IC = 45 mAdc

Test 3

VCE = 80 Vdc

2N3019, 2N3019S

IC = 60 mAdc

2N3057A, 2N3700, 2N3700UB

IC = 22.5 mAdc

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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