Datenblatt-Suchmaschine für elektronische Bauteile |
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LM3578AN Datenblatt(PDF) 9 Page - National Semiconductor (TI) |
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LM3578AN Datenblatt(HTML) 9 Page - National Semiconductor (TI) |
9 / 20 page Applications Information (Continued) C.L. SENSE VOLTAGE MULTIPLICATION When a larger sense resistor value is desired, the voltage divider network, consisting of R1 and R2, may be used. This effectively multiplies the sense voltage by (1 + R1/R2). Also, R1 can be replaced by a diode to increase current limit sense voltage to about 800 mV (diode V f + 110 mV). UNDER-VOLTAGE LOCKOUT Under-voltage lockout is accomplished with few external components. When V in becomes lower than the zener breakdown voltage, the output transistor is turned off. This occurs because diode D1 will then become forward biased, allowing resistor R3 to sink a greater current from the non- inverting input than is sunk by the parallel combination of R1 and R2 at the inverting terminal. R3 should be one-fifth of the value of R1 and R2 in parallel. MAXIMUM DUTY CYCLE LIMITING The maximum duty cycle can be externally limited by adjust- ing the charge to discharge ratio of the oscillator capacitor with a single external resistor. Typical values are 50 µA for the charge current, 450 µA for the discharge current, and a voltage swing from 200 mV to 750 mV. Therefore, R1 is selected for the desired charging and discharging slopes and C1 is readjusted to set the oscillator frequency. 00871117 FIGURE 4. Current Limit Transient Suppressor, Ground Referred 00871118 FIGURE 5. Current Limit Transient Suppressor, V in Referred 00871119 FIGURE 6. Current Limit Sense Voltage Multiplication, Ground Referred 00871120 FIGURE 7. Current Limit Sense Voltage Multiplication, V in Referred 00871122 FIGURE 8. Under-Voltage Lockout www.national.com 9 |
Ähnliche Teilenummer - LM3578AN |
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Ähnliche Beschreibung - LM3578AN |
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