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CY7C1618KV18 Datenblatt(PDF) 21 Page - Cypress Semiconductor |
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CY7C1618KV18 Datenblatt(HTML) 21 Page - Cypress Semiconductor |
21 / 32 page Document Number: 001-44274 Rev. *N Page 21 of 32 CY7C1618KV18/CY7C1620KV18 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 °C to +150 °C Ambient temperature with power applied ................................... –55 °C to +125 °C Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD DC applied to outputs in High Z ........ –0.5 V to VDDQ + 0.3 V DC input voltage [19] ........................... –0.5 V to VDD + 0.3 V Current into outputs (Low) .......................................... 20 mA Static discharge voltage (MIL-STD-883, M. 3015) ......................................... > 2001 V Latch up current ..................................................... > 200 mA Operating Range Range Ambient Temperature (TA) VDD [20] VDDQ [20] Commercial 0 °C to +70 °C 1.8 ± 0.1 V 1.4 V to VDD Industrial –40 °C to +85 °C Neutron Soft Error Immunity Parameter Description Test Conditions Typ Max* Unit LSBU Logical single-bit upsets 25 °C 197 216 FIT/ Mb LMBU Logical multi-bit upsets 25 °C 0 0.01 FIT/ Mb SEL Single event latch up 85 °C 0 0.1 FIT/ Dev * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates – AN54908. Electrical Characteristics Over the Operating Range DC Electrical Characteristics Over the Operating Range Parameter [21] Description Test Conditions Min Typ Max Unit VDD Power supply voltage 1.7 1.8 1.9 V VDDQ I/O supply voltage 1.4 1.5 VDD V VOH Output high voltage Note 22 VDDQ/2 – 0.12 – VDDQ/2 + 0.12 V VOL Output low voltage Note 23 VDDQ/2 – 0.12 – VDDQ/2 + 0.12 V VOH(LOW) Output high voltage IOH =0.1 mA, Nominal impedance VDDQ – 0.2 – VDDQ V VOL(LOW) Output low voltage IOL = 0.1 mA, Nominal impedance VSS –0.2 V VIH Input high voltage VREF + 0.1 – VDDQ + 0.3 V VIL Input low voltage –0.3 – VREF – 0.1 V IX Input leakage current GND VI VDDQ 5– 5 A IOZ Output leakage current GND VI VDDQ, Output disabled 5– 5 A VREF Input reference voltage [24] Typical Value = 0.75 V 0.68 0.75 0.95 V Notes 19. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2). 20. Power up: assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 21. All voltage referenced to ground. 22. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175 < RQ < 350 . 23. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 < RQ < 350 . 24. VREF(min) = 0.68 V or 0.45 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller. |
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