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CY7C1618KV18 Datenblatt(PDF) 22 Page - Cypress Semiconductor

Teilenummer CY7C1618KV18
Bauteilbeschribung  144-Mbit DDR II SRAM Two-Word Burst Architecture
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Hersteller  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1618KV18 Datenblatt(HTML) 22 Page - Cypress Semiconductor

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Document Number: 001-44274 Rev. *N
Page 22 of 32
CY7C1618KV18/CY7C1620KV18
IDD [25]
VDD operating supply
VDD = Max, IOUT = 0 mA,
f = fMAX = 1/tCYC
333 MHz (× 18)
650
mA
(× 36)
790
300 MHz (× 18)
610
mA
250 MHz (× 36)
660
mA
ISB1
Automatic Power Down
Current
Max VDD,
Both Ports Deselected,
VIN  VIH or VIN  VIL,
f = fMAX = 1/tCYC,
Inputs Static
333 MHz (× 18)
410
mA
(× 36)
410
300 MHz (× 18)
390
mA
250 MHz (× 36)
370
mA
Electrical Characteristics (continued)
Over the Operating Range
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter [21]
Description
Test Conditions
Min
Typ
Max
Unit
Note
25. The operation current is calculated with 50% read cycle and 50% write cycle.


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