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SI1012R Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1012R Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si1012R, Si1012X Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 1.8 V (G-S) MOSFET FEATURES • TrenchFET® Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000 V • High-Side Switching • Low On-Resistance: 0.7 • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation PRODUCT SUMMARY VDS (V) RDS(on) ()ID (mA) 20 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 Top View 2 1 S D G 3 SC-75A or SC-89 Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. ORDERING INFORMATION Part Number Package Marking Code Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-75A (SOT-416) C Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) SC-89 (SOT-490) A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C) b TA = 25 °C ID 600 500 mA TA = 85 °C 400 350 Pulsed Drain Currenta IDM 1000 Continuous Source Current (Diode Conduction)b IS 275 250 Maximum Power Dissipationb for SC-75 TA = 25 °C PD 175 150 mW TA = 85 °C 90 80 Maximum Power Dissipationb for SC-89 TA = 25 °C 275 250 TA = 85 °C 160 140 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V |
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