SI1012R datasheet(2/8 Pages) VISHAY

Teilenummer	SI1012R

Bauteilbeschribung	N-Channel 1.8 V (G-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si1012R, Si1012X

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Document Number: 71166

S13-0786-Rev. E, 15-Apr-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.45

0.9

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 0.5

± 1

µA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

0.3

100

nA

VDS = 20 V, VGS = 0 V, TJ = 85 °C

5µA

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

700

mA

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 600 mA

0.41

0.70



VGS = 2.5 V, ID = 500 mA

0.53

0.85

VGS = 1.8 V, ID = 350 mA

0.70

1.25

Forward Transconductancea

gfs

VDS = 10 V, ID = 400 mA

1

S

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 250 mA

750

pC

Gate-Source Charge

Qgs

75

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 47 

ID  200 mA, VGEN = 4.5 V, Rg = 10 

5

ns

Rise Time

tr

5

Turn-Off Delay Time

td(off)

25

Fall Time

tf

11

Ähnliche Beschreibung - SI1012R

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI1012R	50Kb / 5P	N-Channel 1.8-V (G-S) MOSFET Rev. A, 25-Oct-00
Vishay Siliconix	SI1012R	94Kb / 6P	N-Channel 1.8-V (G-S) MOSFET Rev. B, 28-Feb-05
Leshan Radio Company	LSI1012XT1G	324Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
	LSI1012LT1G	457Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
	LSI1012N3T5G	398Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
	LSI1012XT1G	341Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI1012R	204Kb / 10P	N-Channel 1.8 V (G-S) MOSFET Rev. D, 25-Oct-10
Leshan Radio Company	LSI1012LT1G	442Kb / 5P	N-Channel 1.8-V (G-S) MOSFET
Leshan Radio Company	LSI1012N3T5G	323Kb / 5P	N-Channel 1.8-V (G-S) MOSFET
First Silicon Co., Ltd	FTK1012S	353Kb / 5P	N-Channel 1.8-V (G-S) MOSFET

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