UPC2709T

UPC2712T

2.5 GHz SILICON MMIC

WIDE-BAND AMPLIFIER

FEATURES

• WIDE FREQUENCY RESPONSE: 2.5 GHz

• HIGH GAIN: 23 dB (UPC2709T)

• SATURATED OUTPUT POWER:

+11.5 dBm (UPC2709T)

• INTERNAL CURRENT REGULATION MINIMIZES GAIN

CHANGE OVER TEMPERATURE

• 5 V SINGLE SUPPLY VOLTAGE

• SUPER SMALL PACKAGE

• TAPE AND REEL PACKAGING OPTION AVAILABLE

GAIN vs. FREQUENCY

UPC2709

UPC2712

0

0.5

1.0

1.5

2.0

2.5

3.0

30

25

20

15

10

Frequency, f (GHz)

PART NUMBER

UPC2709T

UPC2712T

PACKAGE OUTLINE

T06

T06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

Circuit Current (no signal)

mA

19

25

32

9

12

15

Small Signal Gain

dB

21

23

26.5

18

20

23.5

Upper Limit Operating Frequency

GHz

2.0

2.3

2.2

2.6

Gain Flatness, f = 0.1 ~ 1.8 GHz

dB

±1.0

f = 0.1 ~ 2.0 GHz

±0.8

Saturated Output Power

dBm

9

11.5

0

3

Output Power at 1 dB Compression Point

dBm

7.5

-2.5

NF

Noise Figure

dB

5

6.5

4.5

6

Input Return Loss

dB

7

10

9

12

Output Return Loss

dB

7

10

10

13

ISOL

Isolation

dB

26

31

28

33

Gain -Temperature Coefficient

dB/

°C

-0.002

-0.003

Thermal Resistance (Junction to Ambient)

°C/W

200

200

The UPC2709T and UPC2712T are Silicon Monolithic inte-

grated circuits manufactured using the NESAT III process.

These devices are suitable as buffer amplifiers for wide-band

applications. They are designed for low cost gain stages in

cellular radios, GPS receivers, DBS tuners, PCN, and test/

measurement equipment.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

DESCRIPTION

California Eastern Laboratories