Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS8958 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDS8958 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDS8958 Rev A(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Q1 Q2 30 -30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25 °C Q1 Q2 25 -22 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Q1 Q2 1 -1 µA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V All -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA Q1 Q2 1 -1 1.6 -1.7 3 -3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25 °C Q1 Q2 -4.3 4 mV/ °C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125 °C VGS = 4.5 V, ID = 6 A Q1 21 32 27 28 42 40 m Ω RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125 °C VGS = -4.5 V, ID = -4 A Q2 41 58 58 52 78 80 ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V Q1 Q2 20 -20 A gFS Forward Transconductance VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 Q2 19 11 S Dynamic Characteristics Ciss Input Capacitance Q1 Q2 789 690 pF Coss Output Capacitance Q1 Q2 173 306 pF Crss Reverse Transfer Capacitance Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 66 77 pF |
Ähnliche Teilenummer - FDS8958 |
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Ähnliche Beschreibung - FDS8958 |
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