DZT5401 datasheet(4/7 Pages) DIODES

Teilenummer	DZT5401

Bauteilbeschribung	150V PNP SMALL SIGNAL TRANSISTOR

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Hersteller	DIODES [Diodes Incorporated]

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DZT5401

Datasheet Number: DS31218 Rev. 3 - 2

4 of 7

www.diodes.com

December 2017

DZT5401

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

-160

—

V

IC = -100µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 7)

BVCEO

-150

—

V

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

-6

—

V

IE = -10µA, IC = 0

Collector-Base Cut-off Current

ICBO

—

-50

nA

µA

VCB = -120V, IE = 0

VCB = -120V, IE = 0, TA = +150°C

Emitter-Base Cut-off Current

IEBO

—

-50

nA

VEB = -3V, IC = 0

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage

VCE(SAT)

—

-0.2

-0.5

V

IC = -10mA, IB = -1mA

IC = -50mA, IB = -5mA

Base-Emitter Saturation Voltage

VBE(SAT)

—

-1.0

V

IC = -10mA, IB = -1mA

IC = -50mA, IB = -5mA

Static Forward Current Transfer Ratio

hFE

50

60

50

—

240

—

IC = -1mA, VCE = -5V

IC = -10mA, VCE = -5V

IC = -50mA, VCE = -5V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

fT

100

—

300

MHz

VCE = -10V, IC = -10mA,

f = 100MHz

Output Capacitance

Cobo

—

6

pF

VCB = -10V, f = 1MHz, IE = 0

Small Signal Current Gain

hFE

40

—

260

—

VCE = -10V, IC = -1.0mA,

f = 1.0kHz

Noise Figure

NF

—

8

dB

VCE = -5.0V, IC = -200A,

RS = 10 f = 1.0kHz

Note:

7.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

0

50

100

150

200

250

0.00

0.05

0.10

0.15

0.20

0.25

0

1

2

3

4

5

6

7

8

9

10

-V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

I = -2mA

B

I = -4mA

B

I = -6mA

B

I = -8mA

B

I = -10mA

B

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