Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF100P218 Datenblatt(PDF) 8 Page - Infineon Technologies AG |
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IRF100P218 Datenblatt(HTML) 8 Page - Infineon Technologies AG |
8 / 17 page Final Datasheet 8 V1.0 2017-12-18 IR MOSFET-StrongIRFET™ IRF100P218 Figure 10 Maximum Safe Operating Area Figure 11 Drain-to-Source Breakdown Voltage Figure 12 Typical Coss Stored Energy -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Temperature ( °C ) 99 101 103 105 107 109 111 113 Id = 2.0mA 0 204060 80 100 VDS, Drain-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 22 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec DC LIMITED BY PACKAGE |
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