D

S

G

G

D

S

Gate

Drain

Source

Applications



UPS and Inverter applications



Half-bridge and full-bridge topologies



Resonant mode power supplies



DC/DC and AC/DC converters



OR-ing and redundant power switches



Brushed and BLDC Motor drive applications



Battery powered circuits

Benefits



Improved Gate, Avalanche and Dynamic dv/dt Ruggedness



Fully Characterized Capacitance and Avalanche SOA



Enhanced body diode dv/dt and di/dt Capability



Lead-Free; RoHS Compliant; Halogen-Free

Base part number

Package Type

Standard Pack

Form

Quantity

IRF200P222

TO-247AC

Tube

25

IRF200P222

Orderable Part Number

200V

5.3m

max

6.6m

182A

 

TO-247AC

IRF200P222

G

D

S

D

Final Datasheet

Please read the important Notice and Warnings at the end of this document

V1.0

www.infineon.com

2017-03-10

IRF200P222

IR MOSFET - StrongIRFET™

 

Figure 1 Typical On-Resistance vs. Gate Voltage

Figure 2 Maximum Drain Current vs. Case Temperature

2

4

6

8

10

12

14

16

18

20

VGS, Gate -to -Source Voltage (V)

2

4

6

8

10

12

14

16

18

20

ID = 82A

TJ = 25°C

TJ = 125°C

25

50

75

100

125

150

175

TC , Case Temperature (°C)

0

20

40

60

80

100

120

140

160

180

200