Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF200P222 Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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IRF200P222 Datenblatt(HTML) 1 Page - Infineon Technologies AG |
1 / 17 page D S G G D S Gate Drain Source Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free; RoHS Compliant; Halogen-Free Base part number Package Type Standard Pack Form Quantity IRF200P222 TO-247AC Tube 25 IRF200P222 Orderable Part Number VDSS 200V RDS(on)typ. 5.3m max 6.6m ID 182A TO-247AC IRF200P222 G D S D Final Datasheet Please read the important Notice and Warnings at the end of this document V1.0 www.infineon.com 2017-03-10 IRF200P222 IR MOSFET - StrongIRFET™ Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 2 4 6 8 10 12 14 16 18 20 ID = 82A TJ = 25°C TJ = 125°C 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 20 40 60 80 100 120 140 160 180 200 |
Ähnliche Teilenummer - IRF200P222 |
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Ähnliche Beschreibung - IRF200P222 |
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