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IRF200P222 Datenblatt(PDF) 10 Page - Infineon Technologies AG

Teilenummer IRF200P222
Bauteilbeschribung  UPS and Inverter applications
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRF200P222 Datenblatt(HTML) 10 Page - Infineon Technologies AG

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Final Datasheet
10
2017-03-10
IR MOSFET-StrongIRFET™
IRF200P222
Electrical characteristic diagrams
Figure 16 Avalanche Current vs. Pulse Width
 
 
Figure 17 Maximum Avalanche Energy vs.
Temperature
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 23a, 23b.
4. PD(ave)= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. DT = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS(AR)= PD(ave)·tav
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav, assuming
Tj = 25°C and Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 82A


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