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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF250P224 Datenblatt(PDF) 10 Page - Infineon Technologies AG |
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IRF250P224 Datenblatt(HTML) 10 Page - Infineon Technologies AG |
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10 / 17 page  Final Datasheet 2017-02-27 IR MOSFET-StrongIRFET™ IRF250P224 10 V1.0 Electrical characteristic diagrams Figure 17 Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD(ave)= Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS(AR)= PD(ave)·tav 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 0 100 200 300 400 500 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 58A Figure 16 Avalanche Current vs. Pulse Width 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) 0.1 1 10 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25°C and Tstart = 150°C. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) |
Ähnliche Teilenummer - IRF250P224 |
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Ähnliche Beschreibung - IRF250P224 |
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