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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFP4768PBF Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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IRFP4768PBF Datenblatt(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  IRFP4768PbF HEXFET® Power MOSFET D S G TO-247AC G D S Gate Drain Source Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant Base part number Package Type Standard Pack Form Quantity IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF Orderable Part Number VDSS 250V RDS(on) typ. 14.5m max 17.5m ID 93A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 93 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 IDM Pulsed Drain Current 370 PD @TC = 25°C Maximum Power Dissipation 520 W Linear Derating Factor 3.4 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 24 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 770 mJ IAR Avalanche Current See Fig. 14, 15, 22a, 22b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.29 °C/W RCS Case-to-Sink, Flat Greased Surface 0.24 ––– RJA Junction-to-Ambient ––– 40 S G D 1 2016-12-12 D |
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