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S29GL01GP Datenblatt(PDF) 73 Page - Cypress Semiconductor

Teilenummer S29GL01GP
Bauteilbeschribung  1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
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Hersteller  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL01GP Datenblatt(HTML) 73 Page - Cypress Semiconductor

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Document Number: 002-00886 Rev. *B
Page 73 of 83
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
System Interface String
Addresses
(x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Ch
38h
0036h
VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0006h
Typical timeout per single byte/word write 2N µs
20h
40h
0006h
Typical timeout for buffer write 2N µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
22h
44h
0013h = 1 Gb
0012h = 512 Mb
0011h = 256 Mb
0010h = 128 Mb
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2N times typical (00h = not supported)


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