Datenblatt-Suchmaschine für elektronische Bauteile |
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S29GL01GP Datenblatt(PDF) 73 Page - Cypress Semiconductor |
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S29GL01GP Datenblatt(HTML) 73 Page - Cypress Semiconductor |
73 / 82 page Document Number: 002-00886 Rev. *B Page 73 of 83 S29GL01GP S29GL512P S29GL256P S29GL128P System Interface String Addresses (x16) Addresses (x8) Data Description 1Bh 36h 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV 1Ch 38h 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0006h Typical timeout per single byte/word write 2N µs 20h 40h 0006h Typical timeout for buffer write 2N µs (00h = not supported) 21h 42h 0009h Typical timeout per individual block erase 2N ms 22h 44h 0013h = 1 Gb 0012h = 512 Mb 0011h = 256 Mb 0010h = 128 Mb Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0003h Max. timeout for byte/word write 2N times typical 24h 48h 0005h Max. timeout for buffer write 2N times typical 25h 4Ah 0003h Max. timeout per individual block erase 2N times typical 26h 4Ch 0002h Max. timeout for full chip erase 2N times typical (00h = not supported) |
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