Datenblatt-Suchmaschine für elektronische Bauteile |
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BTS7040-2EPA Datenblatt(PDF) 36 Page - Infineon Technologies AG |
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BTS7040-2EPA Datenblatt(HTML) 36 Page - Infineon Technologies AG |
36 / 58 page Data Sheet 36 Rev. 1.00 2017-08-24 BTS7040-2EPA PROFETTM+2 Protection Figure 31 Reverse Battery Protection (application example) 8.4.2 Overvoltage Protection In the case of supply voltages between VS(EXT,UP) and VBAT(LD), the output transistors are still operational and follow the input pin. In addition to the output clamp for inductive loads as described in Chapter 7.2.2, there is a clamp mechanism available for Overvoltage protection for the logic and the output channels, monitoring the voltage between VS and GND pins (VS(CLAMP)). 8.5 Protection against loss of connection 8.5.1 Loss of Battery and Loss of Load The loss of connection to battery or to the load has no influence on device robustness when load and wire harness are purely resistive. In case of driving an inductive load, the energy stored in the inductance must be handled. PROFETTM+2 devices can handle the inductivity of the wire harness up to 10 µH with IL(NOM). In case of applications where currents and/or the aforementioned inductivity are exceeded, an external suppressor diode (like diode DZ2 shown in Chapter 10) is recommended to handle the energy and to provide a well- defined path to the load current. 8.5.2 Loss of Ground In case of loss of module ground with the load remaining connected to ground, the device protects itself by automatically switching OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN pins. In case of loss of device ground, it is recommended to have a resistor connected between any Digital Input pin and the micro controller to ensure a channel switch OFF (as described in Chapter 10). Protection_RevBatt.emf High-side Channel L, C, R VS OUTn GND IS ReverSaveTM DI Micro controller DO RDI GND -IL -IGND -IIS IDI -VBAT(REV) |
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