Datenblatt-Suchmaschine für elektronische Bauteile |
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ISL1557IUEZ-T7 Datenblatt(PDF) 3 Page - Renesas Technology Corp |
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ISL1557IUEZ-T7 Datenblatt(HTML) 3 Page - Renesas Technology Corp |
3 / 12 page ISL1557 FN7522 Rev 3.00 Page 3 of 12 Apr 6, 2018 Absolute Maximum Ratings (TA = +25°C) Thermal Information VS+ Voltage to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +13.2V VIN+ Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .GND to VS+ Current into any Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA C0, C1 to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6.6V ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Ambient Operating Temperature Range . . . . . . . . . . . . . . . -40°C to +85°C Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-60°C to +150°C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 23 on page 7 Pb-Free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493 CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. Electrical Specifications VS = 12V, RF = 750Ω, RL-DIFF = 50Ω, TA = +25°C, unless otherwise specified. PARAMETER DESCRIPTION CONDITIONS MIN (Note 4)TYP MAX (Note 4)UNIT AC PERFORMANCE BW -3dB Bandwidth RF = 499Ω, AV = +5 300 MHz RF = 750Ω, AV = +5 250 MHz RF = 750Ω, AV = +10 200 MHz THD Total Harmonic Distortion, Differential f = 200kHz, VO = 16VP-P, RL-DIFF = 100Ω -72 -83 dBc f = 4MHz, VO = 2VP-P, RL-DIFF = 100Ω -75 dBc f = 10MHz, VO = 2VP-P, RL-DIFF = 100Ω -71 dBc f = 17MHz, VO = 2VP-P, RL-DIFF = 100Ω -75 dBc SR Slew Rate, Single-Ended VOUT from -3V to +3V 750 1200 V/µs DC PERFORMANCE VOS_CM Offset Voltage Common-Mode -40 +40 mV VOS_DM Offset Voltage Differential Mode -7.5 +7.5 mV ROL Differential Transimpedance VOUT = 12VP-P differential, unloaded 3.0 MΩ INPUT CHARACTERISTICS IB+ Non-Inverting Input Bias Current -7.0 +7.0 µA IB- DM Inverting Input Bias Current Differential Mode -75 3 +75 µA eN Input Noise Voltage 6nVHz iN -Input Noise Current 13 pA/Hz OUTPUT CHARACTERISTICS VOUT Loaded Output Swing (Single-Ended) VS = ±6V, RL DIFF = 50Ω ±4.85 ±5.0 V VS = ±6V, RL DIFF = 20Ω ±4.4 ±4.7 V IOUT Output Current RL = 0Ω 1000 mA SUPPLY VS Supply Voltage Single supply 4.5 13.2 V IS+ (Full Bias) Positive Supply Current per Amplifier All outputs at 0V, C0 = C1 = 0V 13 15 19 mA IS+ (Medium Bias) Positive Supply Current per Amplifier All outputs at 0V, C0 = 5V, C1 = 0V 11 mA IS+ (Low Bias) Positive Supply Current per Amplifier All outputs at 0V, C0 = 0V, C1 = 5V 6.0 mA IS+ (Power-down) Positive Supply Current per Amplifier All outputs at 0V, C0 = C1 = 5V 0.6 1.0 mA IINH, C0 or C1 C0, C1 Input Current, High C0, C1 = 6V 100 175 250 µA IINL, C0 or C1 C0, C1 Input Current, Low C0, C1 = 0V -5 +5 µA VINH, C0 or C1 C0, C1 Input Voltage, High 2.0 V VINL, C0 or C1 C0, C1 Input Voltage, Low 0.8 V NOTE: 4. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA |
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