AON6534 datasheet(1/6 Pages) AOSMD

Teilenummer	AON6534

Bauteilbeschribung	30V N-Channel AlphaMOS

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Hersteller	AOSMD [Alpha & Omega Semiconductors]

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AON6534

30V N-Channel AlphaMOS

General Description

Product Summary

VDS

ID (at VGS=10V)

30A

RDS(ON) (at VGS=10V)

< 8m

Ω

RDS(ON) (at VGS = 4.5V)

< 12m

Ω

Application

100% UIS Tested

100% Rg Tested

Symbol

VDS

VGS

V

Maximum

Units

Parameter

Absolute Maximum Ratings TA=25°C unless otherwise noted

30V

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

V

±20

Gate-Source Voltage

Drain-Source Voltage

30

G

D

S

Top View

1

2

3

4

8

7

6

5

PIN1

DFN5X6

Top View

Bottom View

VGS

IDM

IAS

EAS

VDS Spike

VSPIKE

TJ, TSTG

Symbol

t ≤ 10s

Steady-State

RθJC

100ns

36

V

Maximum Junction-to-Case

°C/W

Maximum Junction-to-Ambient

A D

3.5

64

5

W

Power Dissipation

A

PDSM

W

TA=70°C

25

2.6

TA=25°C

TC=25°C

4.1

10

TC=100°C

Power Dissipation

B

PD

A

TA=25°C

IDSM

A

TA=70°C

ID

30

23

TC=25°C

TC=100°C

109

Pulsed Drain Current

C

Continuous Drain

Current

G

mJ

A

32

Avalanche energy L=0.05mH

C

Avalanche Current

C

15

Continuous Drain

Current

26

20

Units

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Typ

Max

V

±20

Gate-Source Voltage

Maximum Junction-to-Ambient

A

°C/W

RθJA

24

53

30

Rev 1: Mar 2012

www.aosmd.com

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