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AON6572 Datenblatt(PDF) 1 Page - Alpha & Omega Semiconductors

Teilenummer AON6572
Bauteilbeschribung  30V N-Channel AlphaMOS
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Hersteller  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6572 Datenblatt(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6572
General Description
Product Summary
VDS
ID (at VGS=10V)
85A
RDS(ON) (at VGS=10V)
< 3.2m
RDS(ON) (at VGS=4.5V)
< 3.9m
Applications
100% UIS Tested
100% Rg Tested
Symbol
30V N-Channel AlphaMOS
Orderable Part Number
Package Type
Form
Minimum Order Quantity
30V
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Units
AON6572
DFN 5x6
Tape & Reel
3000
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Parameter
Top View
1
2
3
4
8
7
6
5
PIN1
PIN1
DFN5X6
Top View
Bottom View
G
D
S
Symbol
VDS
VGS
IDM
IAS
Avalanche energy
L=0.05mH
C
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TC=25°C
Avalanche Current
C
Continuous Drain
Current
Thermal Characteristics
Parameter
Max
TA=70°C
4
°C
Units
Junction and Storage Temperature Range
-55 to 150
Typ
PDSM
W
TA=25°C
6.2
Power Dissipation
A
Maximum Junction-to-Ambient
A
°C/W
RθJA
15
40
20
W
ID
V
A
44
A
288
IDSM
28.5
mJ
48
36
85
V
A
±12
V
Maximum
Units
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
2.1
50
2.6
Power Dissipation
B
19.2
TC=100°C
10µs
PD
30
36
48
Gate-Source Voltage
Pulsed Drain Current
C
63.5
Parameter
Drain-Source Voltage
Continuous Drain
Current
G
Rev.1.0: February 2014
www.aosmd.com
Page 1 of 6


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