2003 May 15

2

Philips Semiconductors

Product specification

Schottky barrier diode

1PS10SB62

FEATURES

• Ultra high switching speed

• Very low capacitance

• High breakdown voltage

• Leadless ultra small plastic package

(1 mm

× 0.6 mm × 0.5 mm)

• Power dissipation comparable to SOT23.

APPLICATIONS

• Ultra high-speed switching

• High frequency applications

• Mobile communication, digital (still) cameras, PDAs and

PCMCIA cards.

DESCRIPTION

An epitaxial Schottky barrier diode encapsulated in a

SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.

handbook, halfpage

MDB391

Bottom view

Fig.1 Simplified outline (SOD882) and symbol.

Marking code: S1.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Note

1. Pulse test: pulse width = 300

µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60

µm copper strip line.

Soldering

Reflow soldering is the only recommended soldering method.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

continuous reverse voltage

−

40

V

continuous forward current

−

20

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

800

mV

reverse current

1

µA

diode capacitance

0.6

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient note 1

500

K/W