Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS4685 Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDS4685 Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page 3 www.fairchildsemi.com FDS4685 Rev. C(W) Typical Characteristics: 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -V DS, DRAIN TO SOURCE VOLTAGE (V) V GS = -10V -6.0V -4.0V -4.5V -3.0V -3.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 010 20 304050 -ID, DRAIN CURRENT (A) V GS = - 3.5V -4.5V -8.0V -6.0V -5.0V -10V -4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( °C) I D = -8.2A V GS = - 10V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 2468 10 -VGS, GATE TO SOURCE VOLTAGE (V) I D = -4.1A T A = 125° C T A = 25° C Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 1.5 2 2.5 3 3.5 4 4.5 -V GS, GATE TO SOURCE VOLTAGE (V) T A = -55° C 25 °C 125 °C V DS = -5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V T A = 125° C 25 °C -55 °C Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Ähnliche Teilenummer - FDS4685 |
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Ähnliche Beschreibung - FDS4685 |
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