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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS6699S Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDS6699S Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com January 2005 FDS6699S Rev. D FDS6699S 30V N-Channel PowerTrench® SyncFET™ Features ■ 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky body diode ■ High performance trench technology for extremely low RDS(ON) and fast switching ■ High power and current handling capability ■ 100% RG (Gate Resistance) tested Applications ■ Synchronous Rectifier for DC/DC Converters – ■ Notebook Vcore low side switch ■ Point of Load low side switch General Description The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fair- child’s monolithic SyncFET technology. Absolute Maximum Ratings TA=25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 21 A – Pulsed 105 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +125 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Device Marking Device Reel Size Tape width Quantity FDS6699S FDS6699S 13’’ 12mm 2500 units S D S S SO-8 D D D G 5 6 7 8 4 3 2 1 |
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Ähnliche Beschreibung - FDS6699S |
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