Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF16N25C Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FQPF16N25C Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page Rev. A, March 2004 ©2004 Fairchild Semiconductor Corporation 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 µs 10 ms 100 µs DC 1 ms Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10ms 100µs DC 1ms Operationin This Area is LimitedbyR DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. SinglePulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 4 8 12 16 T C, Case Temperature [ ] ℃ -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 7.8 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µ A T J, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for FQP16N25C Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-2. Maximum Safe Operating Area for FQPF16N25C |
Ähnliche Teilenummer - FQPF16N25C |
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Ähnliche Beschreibung - FQPF16N25C |
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