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2SK2900 Datenblatt(PDF) 1 Page - Fuji Electric

Teilenummer 2SK2900
Bauteilbeschribung  N CHANNEL MOSFET
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Hersteller  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK2900 Datenblatt(HTML) 1 Page - Fuji Electric

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2SK2900-01
N-channel MOS-FET
FAP-IIIB Series
60V
14,5m
Ω ±45A
60W
> Features
> Outline Drawing
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
60
V
Continous Drain Current
I D
±45
A
Pulsed Drain Current
I D(puls)
±180
A
Gate-Source-Voltage
V GS
±30
V
Maximum Avalanche Energy
E AV
461.9
mJ*
Max. Power Dissipation
P D
60
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
* L=0,304mH, VCC=24V
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
60
V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
2,5
3
3,5
V
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
10
500
µA
VGS=0V
Tch=125°C
0,2
1,0
mA
Gate Source Leakage Current
I GSS
VGS=30V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=22.5A
VGS=10V
12,0
14,5
m
Forward Transconductance
g fs
ID=22.5A
VDS=25V
10
25
S
Input Capacitance
C iss
VDS=25V
2300
3450
pF
Output Capacitance
C oss
VGS=0V
910
1370
pF
Reverse Transfer Capacitance
C rss
f=1MHz
260
390
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
18
30
ns
t r
55
80
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
70
120
ns
t f
RGS=10 Ω
48
80
ns
Avalanche Capability
I AV
L = 100µH
Tch=25°C
45
A
Diode Forward On-Voltage
V SD
IF=45A VGS=0V Tch=25°C
1,0
1,5
V
Reverse Recovery Time
t rr
IF=45A VGS=0V
60
ns
Reverse Recovery Charge
Q rr
-dI/dt=100A/µs Tch=25°C
0,11
µC
-
Thermal Characteristics
Item
Symbol
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-c)
channel to case
2,08
°C/W
R th(ch-a)
channel to ambient
75,00
°C/W
VGS=10V
ID=45A


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