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SM05T1 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer SM05T1
Bauteilbeschribung  Transient Voltage Suppressor Diode Array
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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SM05T1 Datenblatt(HTML) 2 Page - ON Semiconductor

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SM05T1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
300
Watts
IEC 61000-4-2 (ESD)
Air
Contact
±15
±8.0
kV
IEC 61000-4-4 (EFT)
40
A
IEC 61000-4-5 (Lightening)
12
A
Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25°C
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction to Ambient
RθJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
- 55 to +150
°C
Lead Solder Temperature - Maximum (10 Second Duration)
TL
260
°C
1. Non-repetitive current pulse per Figure 3
2. FR-5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
Uni-Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS
VBR, Breakdown Voltage
VC @
IPP =
Max IPP
Typical
Capacitance
VRWM
IR @ VRWM
(Volts)
IT
IPP =
1 Amp
Max IPP
(Note 4)
(pF)
Device
Device
Marking
(Volts)
(
mA)
Min
Max
mA
(Volts)
(Amps)
Pin 1 to 3
@ 0 Volts
SM05T1
5M
5
10
6.2
7.3
1.0
9.8
17
225
SM12T1
12M
12
1.0
13.3
15.75
1.0
19
12
95
4. 8
× 20 ms pulse waveform per Figure 3


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