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IRF6619 Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF6619
Bauteilbeschribung  DirectFET Power MOSFET
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6619 Datenblatt(HTML) 1 Page - International Rectifier

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www.irf.com
1
2/10/05
IRF6619
DirectFET
™ Power MOSFET ‚
Description
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
DirectFET
™ ISOMETRIC
MX
PD - 96917
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching above 1MHz

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction Losses
l Compatible with existing Surface Mount Techniques

 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS =
24A, VGS =10V. Part not recommended for use above this value.
† Surface mounted on 1 in. square Cu board, steady state.
‰ TC measured with thermocouple mounted to top (Drain) of part.
Notes:
SQ
SX
ST
MQ
MX
MT
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
38nC
13nC
3.5nC
18nC
22nC
2.0V
0
20
406080
100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 16V
VDS= 10V
ID= 16A
MX
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
6.0
TJ = 25°C
TJ = 125°C
ID = 30A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
h
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
h
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
kÃ(Package Limited)
IDM
Pulsed Drain Current
e
EAS (Thermally limited)
Single Pulse Avalanche Energy
f
mJ
IAR
Avalanche Current
Ãe
A
EAR
Repetitive Avalanche Energy
e
mJ
Max.
24
150
240
±20
20
30
240
See Fig. 14, 15, 17a, 17b,
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 1.65m
Ω@ 10V 2.2mΩ@ 4.5V


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