Datenblatt-Suchmaschine für elektronische Bauteile |
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MCR100-008G Datenblatt(PDF) 4 Page - ON Semiconductor |
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MCR100-008G Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 6 page MCR100 Series http://onsemi.com 4 Figure 1. Typical Gate Trigger Current versus Junction Temperature TJ, JUNCTION TEMPERATURE (°C) 100 90 80 70 60 50 40 30 110 50 35 20 5 −10 −25 −40 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature TJ, JUNCTION TEMPERATURE (°C) 110 65 50 35 20 5 −10 −25 −40 0.8 0.7 0.6 0.5 0.4 0.3 0.2 20 10 0.9 1.0 95 80 65 95 80 DC Figure 3. Typical Holding Current versus Junction Temperature TJ, JUNCTION TEMPERATURE (°C) 1000 100 110 65 50 35 20 5 −10 −25 −40 Figure 4. Typical Latching Current versus Junction Temperature 10 Figure 5. Typical RMS Current Derating IT(RMS), RMS ON-STATE CURRENT (AMPS) 120 110 100 90 80 70 60 50 0.5 0.4 0.3 0.2 0.1 0 Figure 6. Typical On−State Characteristics VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3.5 3.2 2.3 2.0 1.7 1.4 1.1 0.8 0.5 1 0.1 40 10 95 80 TJ, JUNCTION TEMPERATURE (°C) 1000 100 110 65 50 35 20 5 −10 −25 −40 10 95 80 30 ° 60 ° 90 ° 120 ° 180 ° 2.9 2.6 MAXIMUM @ TJ = 110°C MAXIMUM @ TJ = 25°C |
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Ähnliche Beschreibung - MCR100-008G |
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