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MCR100-008G Datenblatt(PDF) 4 Page - ON Semiconductor

Teilenummer MCR100-008G
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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MCR100-008G Datenblatt(HTML) 4 Page - ON Semiconductor

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MCR100 Series
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4
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
100
90
80
70
60
50
40
30
110
50
35
20
5
−10
−25
−40
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
110
65
50
35
20
5
−10
−25
−40
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
10
0.9
1.0
95
80
65
95
80
DC
Figure 3. Typical Holding Current versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
1000
100
110
65
50
35
20
5
−10
−25
−40
Figure 4. Typical Latching Current versus
Junction Temperature
10
Figure 5. Typical RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMPS)
120
110
100
90
80
70
60
50
0.5
0.4
0.3
0.2
0.1
0
Figure 6. Typical On−State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
3.5
3.2
2.3
2.0
1.7
1.4
1.1
0.8
0.5
1
0.1
40
10
95
80
TJ, JUNCTION TEMPERATURE (°C)
1000
100
110
65
50
35
20
5
−10
−25
−40
10
95
80
30
°
60
°
90
°
120
°
180
°
2.9
2.6
MAXIMUM @ TJ = 110°C
MAXIMUM @ TJ = 25°C


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