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MCR100-6RLRMG Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MCR100-6RLRMG
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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Hersteller  ONSEMI [ON Semiconductor]
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MCR100 Series
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3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
75
200
°C/W
Lead Solder Temperature
(
t1/16″ from case, 10 secs max)
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
TC = 25°C
(VD = Rated VDRM and VRRM; RGK = 1 kW)TC = 110°C
IDRM, IRRM
10
100
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage*
(ITM = 1.0 A Peak @ TA = 25°C)
VTM
1.7
V
Gate Trigger Current (Continuous dc) (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, RL = 100 W)
IGT
40
200
mA
Holding Current(2)
TC = 25°C
(VAK = 7.0 Vdc, Initiating Current = 20 mA)
TC = −40°C
IH
0.5
5.0
10
mA
Latch Current
TC = 25°C
(VAK = 7.0 V, Ig = 200 mA)
TC = −40°C
IL
0.6
10
15
mA
Gate Trigger Voltage (Continuous dc) (Note 3)
TC = 25°C
(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C
VGT
0.62
0.8
1.2
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C)
dV/dt
20
35
V/
ms
Critical Rate of Rise of On−State Current
(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
di/dt
50
A/
ms
*Indicates Pulse Test: Pulse Width
≤ 1.0 ms, Duty Cycle ≤ 1%.
2. RGK = 1000 W included in measurement.
3. Does not include RGK in measurement.
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)


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