Power Transistors

1

2SA0885

2SA0885

2SA0885

2SA0885

(2SA885)

(2SA885)

(2SA885)

(2SA885)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC1846

I Features

• Output of 3 W can be obtained by a complementary pair with

2SC1846

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

I Absolute Maximum Ratings T

1: Emitter

2: Collector

3: Base

TO-126B Package

Unit: mm

I Electrical Characteristics T

Parameter

Symbol

Rating

Unit

Collector to base voltage

−45

V

Collector to emitter voltage

−35

V

Emitter to base voltage

−5V

Peak collector current

−1.5

A

Collector current

−1A

Collector power dissipation

1

W

2

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

− 0.1

µA

−20 V, I

−100

µA

Emitter cutoff current

−5V, I

−10

µA

Collector to base voltage

−45

V

Collector to emitter voltage

−2 mA, I

−35

V

Forward current transfer ratio

−10 V, I

−500 mA

85

340

50

Collector to emitter saturation voltage

−500 mA, I

−50 mA

− 0.5

V

Transition frequency

−10 V, I

200

MHz

Collector output capacitance

20

30

pF

Note) *: Rank classification

Rank

Q

R

S

85 to 170

120 to 240

170 to 340

Note) *1: Without heat sink

*2: With a 100 × 100 × 2 mm A1 heat sink

8.0

+0.5

–0.1

123

Note.) The Part number in the Parenthesis shows conventional part number.