Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS8896 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDS8896 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page tm April 2007 ©2007 Fairchild Semiconductor Corporation FDS8896 Rev. B www.fairchildsemi.com 1 FDS8896 N-Channel PowerTrench® MOSFET 30V, 15A, 6.0m Ω Features rDS(on) = 6.0mΩ, VGS = 10V, ID = 15A rDS(on) = 7.3mΩ, VGS = 4.5V, ID = 14A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications DC/DC converters SO-8 Branding Dash 1 5 2 3 4 4 3 2 1 5 6 7 8 |
Ähnliche Teilenummer - FDS8896 |
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Ähnliche Beschreibung - FDS8896 |
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