ISCC18126 datasheet(2/2 Pages) ISC

Teilenummer	ISCC18126

Bauteilbeschribung	isc N-Channel MOSFET Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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isc N-Channel Mosfet Transistor

ISCC18126

·

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

800

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

2

4.0

V

RDS(ON)*

Drain-Source On-stage Resistance

VGS= 10V; ID=4A

1.1

1.5

Ω

IGSS

Gate Source Leakage Current

VGS= ±30V;VDS= 0

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 800V; VGS= 0

25

µA

VSD*

Diode Forward Voltage

IF= 7A; VGS= 0

1.5

V

*:Pulse width≤300us,duty cycle ≤2%

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ISCC18126 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

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Ähnliche Teilenummer - ISCC18126

Ähnliche Beschreibung - ISCC18126

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