Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCC18127 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCC18127 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor ISCC18127 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 7 V BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 1100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A hFE1 DC Current Gain IC= 0.2A; VCE= 5V 10 40 hFE2 DC Current Gain IC= 1A; VCE= 5V 8 |
Ähnliche Teilenummer - ISCC18127 |
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Ähnliche Beschreibung - ISCC18127 |
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