Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCE18114 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCE18114 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor 1 isc Website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ISCE18114 DESCRIPTION · Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 40 V · DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low power audio amplifier · Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-peak 6 A PC Collector Power Dissipation Ta=25℃ 1.5 W Collector Power Dissipation TC=25℃ 15 Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.3 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 85 ℃ /W |
Ähnliche Teilenummer - ISCE18114 |
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Ähnliche Beschreibung - ISCE18114 |
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