Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1095 Datenblatt(PDF) 3 Page - Hitachi Semiconductor |
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2SK1095 Datenblatt(HTML) 3 Page - Hitachi Semiconductor |
3 / 3 page Power vs. Temperature Derating 60 40 20 0 50 100 150 Case Temperature TC (°C) Maximum Safe Operation Area 500 1 100 Drain to Source Voltage VDS (V) 300 30 3 1.0 0.3 1.0 3 10 30 100 10 0.5 Ta = 25°C 1 ms Operation in this area is limited by R DS (on) 2SK1095 3 1.0 0.1 0.03 0.01 0.3 10 µ 100 µ 1 m 10 m 100 m 1 10 Pulse Width PW (s) θch–c(t) = γ S(t) · θch–c θch–c = 4.17°C/W, T C = 25°C PDM PW T D = T PW Normalized Transient Thermal Impedance vs. Pulse Width 1 Shot Pulse TC = 25°C 0.01 0.05 0.02 0.2 0.1 0.5 D = 1 |
Ähnliche Teilenummer - 2SK1095 |
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Ähnliche Beschreibung - 2SK1095 |
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