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2SC4111 Datenblatt(PDF) 1 Page - Panasonic Semiconductor

Teilenummer 2SC4111
Bauteilbeschribung  Silicon NPN triple diffusion planar type
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Hersteller  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

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1
Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1500
1500
700
7
22
10
3.5
150
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
ICBO
VEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 750V, IE = 0
VCB = 1500V, IE = 0
IC = 1mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 2.5A
IC = 7A, IB = 2.5A
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 6A, Lleak = 5µH,
IB1 = 1.7A, IB2 = –1.7A
min
7
5
3
typ
2
max
10
1
8
5
1.5
12
0.6
Unit
µA
mA
V
V
V
MHz
µs
µs
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
φ 3.3±0.2


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