Datenblatt-Suchmaschine für elektronische Bauteile |
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AOK22N50 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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AOK22N50 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor AOK22N50 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 500 V VGS(th) Gate Threshold Voltage VDS=5V; ID=0.25mA 3.4 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=11A 0.21 0.26 Ω IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS= 500V; VGS= 0V;Tc=25℃ VDS= 400V; VGS= 0V;Tc=150℃ 1 10 μ A VSDF Diode forward voltage ISD=1A, VGS = 0 V 1.0 V |
Ähnliche Teilenummer - AOK22N50 |
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Ähnliche Beschreibung - AOK22N50 |
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