Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2795 Datenblatt(PDF) 2 Page - Hitachi Semiconductor |
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2SK2795 Datenblatt(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SK2795 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage VDSS 10 V Gate to source voltage VGSS ±6V Drain current ID 0.17 A Drain peak current ID(pulse)*1 0.3 A Channel dissipation Pch*2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. PW ≤ 10ms, duty cycle ≤ 50 % 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min T y p Max Unit Test Conditions Zero gate voltege drain current IDSS — — 10 µA VDS = 10 V, VGS = 0 Gate to source leak current IGSS — — ±5.0 µA VGS = ±6V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.3 — 1.0 V ID = 1mA, VDS = 5V Input capacitance Ciss — 9.5 — pF VGS = 2V, VDS = 0 f = 1MHz Output capacitance Coss — 4.5 — pF VDS = 5, VGS = o f = 1MHz Output Power Pout 24 — — dBm VDS = 4.7V f =836.5MHz Pin = 13dBm Drain Rational ηD 40 — — % VDS = 4.7V f =836.5MHz Pin = 13dBm Note: 3. Marking is “ DX “. |
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